Display device and manufacturing method thereof
US9570616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/38
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.