Thim film transistor and method for making the same, thim film transistor panel and display device
US9570627B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.