Thin film transistor, array substrate and method of fabricating the same, and display device

US9570629B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• BEIJING BOE OPTOELECTRONICS · CN

Inventors

• Jiaxiang Zhang · Beijing, CN
• Jian Guo · Milpitas, US
• Xiaohui Jiang · Beijing, CN

Key dates

• Filing date: Dec 4, 2013
• Grant date: Feb 14, 2017
• Expiry date: May 21, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower source, an upper drain and a lower drain. The upper active layer and the lower active layer are disposed at an upper side and a lower side of the gate, respectively, the lower source and the lower drain are connected to the lower active layer, respectively, and the upper source and the upper drain are connected to the upper active layer, respectively. The embodiments of the present invention also provide an array substrate including the thin film transistor, a method of fabricating the array substrate, and a display device including the array substrate.