Photodiode and method of manufacturing the same, and X-ray detector and method of manufacturing the same
US9570645B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A photodiode and a method of manufacturing the same, and an X-ray detector and a method of manufacturing the same are provided. The PIN photodiode includes a first doped layer, a second doped layer and an intrinsic layer between the first and second doped layers, the first doped layer is provided on a source/drain electrode layer of a thin film transistor of the X-ray detector. A heavily-doped region is provided in the second doped layer, has a dosage concentration larger than that of the second doped layer, and is electrically connected with a cathode of the PIN photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.