Carbon mixture ohmic contact for carbon nanotube transistor devices
US9570695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jul 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.