RF power transistors with impedance matching circuits, and methods of manufacture thereof
US9571044B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.