Reference circuits for biasing radio frequency electronics
US9571139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0408
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.