MEMS electrostatic actuator device for RF varactor applications
US9573801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2016 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 15, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2207/096
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.