Patent · US Active

Systems and methods for press force detectors

US9574954B2 · kind B2 · utility

11Cited by
5References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 5, 2016
Grant dateFeb 21, 2017
Priority date
Expiry dateJan 5, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/065
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Certain example embodiments include a press sensor element that includes a piezoelectric layer having a first surface in communication with a first layer, the first layer including a first conductive region, where the first conductive region covers at least a central portion the first surface. The sensor element includes a second surface in communication with a second layer, the second layer including a second conductive region, a third conductive region, and a first non-conductive void region separating the second conductive region and the third conductive region. An area of the first conductive region is configured in size relative to an area of the third conductive region to substantially reduce a thermally-induced voltage change between two or more of the first, second, and third conductive regions responsive to a corresponding temperature change of at least a portion of the piezoelectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.