Method to realize electronic field-effect transistor sensors
US9575029B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Feb 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/761
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A transistor includes at least one conductive layer, at least one gate dielectric layer and at least one semiconducting film deposited on top of a receptor molecule layer previously deposited or covalently linked to the surface of the gate dielectric. The layer of biological material includes single or double layers of phospholipids, layers made of proteins such as receptors, antibodies, ionic channels and enzymes, single or double layers of phospholipids with inclusion or anchoring of proteins such as: receptors, antibodies, ionic channels and enzymes, layers made of oligonucleotide (DNA, RNA, PNA) probes, layers made of cells or viruses, layers made of synthetic receptors for example molecules or macromolecules similar to biological receptors for properties, reactivity or steric aspects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.