Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device
US9575410B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 6, 2012 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/76
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a photosensitive resin composition which comprises: (A-1) a resin containing a structure represented by general formula (1); and (B) a photo-acid generating agent. In general formula (1), X, R1 to R7, m1 to m4, n1, n2, Y and W are each as defined in the description.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.