Spin hall effect magnetic apparatus, method and applications
US9576631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Aug 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An ST-MRAM structure, a method for fabricating the ST-MRAM structure and a method for operating an ST-MRAM device that results from the ST-MRAM structure each utilize a spin Hall effect base layer that contacts a magnetic free layer and effects a magnetic moment switching within the magnetic free layer as a result of a lateral switching current within the spin Hall effect base layer. This resulting ST-MRAM device uses an independent sense current and sense voltage through a magnetoresistive stack that includes a pinned layer, a non-magnetic spacer layer and the magnetic free layer which contacts the spin Hall effect base layer. Desirable non-magnetic conductor materials for the spin Hall effect base layer include certain types of tantalum materials and tungsten materials that have a spin diffusion length no greater than about five times the thickness of the spin Hall effect base layer and a spin Hall angle at least about 0.05.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.