Patent · US Active

Focused ion beam systems and methods of operation

US9576767B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

INDIAN INSTITUTE OF TECHNOLOGY KANPUR · IN

Inventors

Sudeep Bhattacharjee · Kanpur, IN
Jose Mathew · Mumbai, IN

Key dates

Filing date	Mar 18, 2014
Grant date	Feb 21, 2017
Priority date	—
Expiry date	Mar 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31749
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.