Image sensors including photoelectric conversion portions with increased area
US9577000B2 · kind B2 · utility
0Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.