Semiconductor device and method for fabricating the same
US9577043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Aug 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.