Zener diode having an adjustable breakdown voltage
US9577053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between a an anode region having a first conductivity type and a cathode region having a second conductivity type, the cathode region extending from the surface of the substrate. A first conducting region is configured to generate a first electric field perpendicular to the plane of the Zener diode junction upon application of a first voltage to the first conducting region, and a second conducting region is configured to generate a second electric field along the plane of the Zener diode junction upon application of a second voltage to the second conducting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.