Semiconductor device with varied electrodes

US9577054B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takuma Hara · Kamakura, JP
• Tetsuro Nozu · Tokyo, JP

Key dates

• Filing date: Aug 5, 2015
• Grant date: Feb 21, 2017
• Expiry date: Aug 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor device comprises an element region and a terminal region that surrounds the element region. The semiconductor device includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type and provided on the first semiconductor region. A third semiconductor region having the first conductivity type is provided on the second semiconductor region. A first electrode is electrically connected to the first semiconductor region. A second electrode is electrically connected to the third semiconductor region. A third and a fourth electrode are disposed in the element region. A distance from the first electrode to the third electrode is less than a distance from the first electrode to the fourth electrode.