Semiconductor device
US9577086B2 · kind B2 · utility
4Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/0603
Abstract
A device that increases a value of current flowing through a whole chip until a p-n diode in a unit cell close to a termination operates and reduces a size of the chip and a cost of the chip resulting from the reduced size. The device includes a second well region located to sandwich the entirety of a plurality of first well regions therein in plan view, a third separation region located to penetrate the second well region from a surface layer of the second well region in a depth direction, and a second Schottky electrode provided on the third separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.