Zener diode having an adjustable low breakdown voltage
US9577116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
The present disclosure relates to a Zener diode including a cathode region having a first conductivity type, formed on a surface of a semiconductor substrate having a second conductivity type. The Zener diode includes an anode region having the second conductivity type, formed beneath the cathode region. One or more trench isolations isolate the cathode and anode regions from a remainder of the substrate. A first conducting region is configured to, when subjected to an adequate voltage, generate a first electric field perpendicular to an interface between the cathode and anode regions. A second conducting region is configured to, when subjected to an adequate voltage, generate a second electric field parallel to the interface between the cathode and anode regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.