Patent · US Active

Light emitting diode chip

US9577165B2 · kind B2 · utility

1Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 23, 2012
Grant dateFeb 21, 2017
Priority date
Expiry dateMar 30, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002

Abstract

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.