Method for forming a metal cap in a semiconductor memory device
US9577192B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2014 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | May 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap above a recessed cell structure in order to prevent degradation of components inside the cell structure in oxidative or corrosive environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.