Tunable laser with high thermal wavelength tuning efficiency
US9577408B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 31, 2015 |
| Grant date | Feb 21, 2017 |
| Priority date | — |
| Expiry date | Dec 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.