Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
US9580818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2011 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.