Growth methods for controlled large-area fabrication of high-quality graphene analogs
US9580834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Mar 28, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.