Methods for evaluating strain of crystalline devices
US9581506B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for evaluating strain of crystalline structure are provided herein. In accordance with an exemplary embodiment, a method for evaluating strain of a crystalline structure includes directing an electron beam at the crystalline structure to produce an electron diffraction pattern including a reflection point area. The electron diffraction pattern is detected with a detector that includes a plurality of pixels to produce a raw data set. The raw data set is filtered by applying a mathematical median filter to produce a filtered data set, and a contrast of the filtered data set is enhanced to produce an enhanced data set. A center point of the reflection point area is determined with the enhanced data set, and the strain of the crystalline structure is determined based on analysis of the center point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.