Semiconductor device
US9583441B2 · kind B2 · utility
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3References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 24, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Jul 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO(1-x)Nx (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.