Lateral power MOSFET
US9583478B1 · kind B1 · utility
2Cited by
5References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2011 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/49171
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral power MOSFET structure is disclosed. In some embodiments, a semiconductor device comprises substantially concentric source, channel, and drain regions; a metal layer at least in part comprising a drain plane disposed over the source, channel, and drain regions; and a metal layer at least in part comprising a source plane disposed over the source, channel, and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.