Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion
US9583481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Sep 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a first conductive portion on a first side of a first shallow trench isolation (STI) region. The first conductive portion is formed within a first well having a first conductivity type. The first conductive portion has the first conductivity type. The first conductive portion is connected to an electro static discharge (ESD) circuit. A second conductive portion is on a second side of the first STI region. The second conductive portion is formed within a second well having a second conductivity type. The second conductive portion having the first conductivity type is connected to a first nanowire and an input output I/O port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.