Non-volatile memory device
US9583505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/292
Abstract
According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.