Magnetoresistive memory device and manufacturing method of the same
US9583535B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Nov 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
According to one embodiment, a magnetoresistive memory device includes a substrate, a first oxide film provided on the substrate, bottom electrodes provided in the first oxide film, a part of each of the bottom electrodes protruding above the first oxide film, magnetoresistive elements provided on the respective bottom electrodes, sidewall nitride films provided on side surfaces of the respective bottom electrodes and the magnetoresistive elements, a second oxide film provided on the magnetoresistive elements, the sidewall nitride films and the first oxide film, and contact electrodes provided in the second oxide film and the first oxide film to reach the substrate from an upper surface of the second oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.