Oxide for semiconductor layer of thin film transistor, thin film transistor and display device
US9583633B2 · kind B2 · utility
1Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 27, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Feb 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm−3 or less, and a mobility satisfies 15 cm2/Vs or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.