Amorphous oxide and field effect transistor
US9583637B2 · kind B2 · utility
57Cited by
36References
9Claims
0Family size
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Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.