Graphene-inserted phase change memory device and method of fabricating the same

US9583702B2 · kind B2 · utility

Assignees

• SAMSUNG ELECTRONICS CO., LTD. · KR
• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Yongsung Kim · Suwon-si, KR
• Chiyui Ahn · Palo Alto, US
• Aditya Sood · Palo Alto, US
• Eric Pop · Champaign, US
• H.-S. Philip Wong · Stanford, US
• Kenneth E. Goodson · Belmont, US
• Scott Fong · Palo Alto, US
• Seunghyun Lee · Paju-si, KR
• Christopher M. Neumann · Portland, US
• Mehdi Asheghi · Palo Alto, US

Key dates

• Filing date: Jan 29, 2016
• Grant date: Feb 28, 2017
• Expiry date: Jan 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.