Method of growing high-quality single layer graphene by using Cu/Ni multi-layer metalic catalyst, and graphene device using the same
US9586826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.