Patent · US Active

MEMS variable capacitor with enhanced RF performance

US9589731B2 · kind B2 · utility

0Cited by
8References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 4, 2012
Grant dateMar 7, 2017
Priority date
Expiry dateMay 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01G5/18
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.