Packaged RF amplifier devices with grounded isolation structures and methods of manufacture thereof
US9589927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Sep 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a packaged RF amplifier device includes a device substrate, a transistor die coupled to the device substrate, and an isolation structure coupled to the transistor die. The transistor die has a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface. The isolation structure is coupled to the conductive structure and extends into an area above the top die surface between the first and second transistors. The isolation structure may be a wirebond fence, a conductive wall, conductive pillars or vias, or a plated trench that extends vertically upward from the conductive structure. The device may be encapsulated with molding compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.