High-electron-mobility transistor with protective diode
US9589951B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
Performance of a semiconductor device is improved. The semiconductor device includes a substrate composed of silicon, a semiconductor layer composed of p-type nitride semiconductor provided on the substrate, and a transistor including a channel layer provided on the semiconductor layer. The semiconductor device further includes an n-type source region provided in the channel layer, and an n-type drain region provided in the channel layer separately from the source region in a plan view.Each of the source region and the drain region is in contact with the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.