Radiation-emitting semiconductor chip

US9590008B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Jürgen Moosburger · Regensburg, DE
• Norwin von Malm · Nittendorf, DE
• Patrick Rode · Regensburg, DE
• Lutz Höppel · Alteglofsheim, DE
• Karl Engl · Niedergebraching, DE

Key dates

• Filing date: May 4, 2015
• Grant date: Mar 7, 2017
• Expiry date: May 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.