Patent · US Active

Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics

US9590015B2 · kind B2 · utility

1Cited by

1References

23Claims

0Family size

Assignee

Rutgers, the State University of New Jersey · US

Inventors

Yicheng Lu · East Brunswick Township, US
Yang Zhang · San Diego, US
Chieh-Jen Ku · Hillsboro, US

Key dates

Filing date	Nov 10, 2014
Grant date	Mar 7, 2017
Priority date	—
Expiry date	Nov 10, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/53

Abstract

A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.