Graphene base transistor and method for making the same

US9590045B2 · kind B2 · utility

Assignee

• IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK · DE

Inventors

• Andre Wolff · Frankfurt, DE
• Wolfgang Mehr · Großbreitenbach, DE
• Grzegorz Lupina · Villach, AT
• Jaroslaw Dabrowski · Frankfurt, DE
• Gunther Lippert · Frankfurt, DE
• Mindaugas Lukosius · Frankfurt, DE
• Chafik Meliani · Berlin, DE
• Christian Wenger · Berlin, DE

Key dates

• Filing date: May 23, 2014
• Grant date: Mar 7, 2017
• Expiry date: May 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.