Crystalline multilayer structure and semiconductor device
US9590050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.