Method for manufacturing a FinFET device
US9590076B1 · kind B1 · utility
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14References
4Claims
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Key dates
| Filing date | Aug 1, 2014 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a FinFET device, including providing a substrate; implementing a source/drain doping on the substrate; etching the doped substrate to form a source region and a drain region; forming a fin channel between the source region and the drain region; and forming a gate on the Fin channel. The fin and the gate are formed after the source/drain doping is implemented on the substrate, so that the source/drain doping is done as a doping for a planar device, which ensures the quality of the source/drain coping and improves the property of the FinFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.