Patent · US Active

Light-emitting diode

US9590137B2 · kind B2 · utility

16Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2015
Grant dateMar 7, 2017
Priority date—
Expiry dateNov 12, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.