GaN based LED epitaxial structure and method for manufacturing the same

US9590138B2 · kind B2 · utility

Assignee

• FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Yongge Cao · Fujian, CN
• Zhuguang Liu · Fujian, CN
• Zhonghua Deng · Dongguan, CN
• Jian-Wei Chen · Zhubeikou, TW
• Junting Li · Woodbury, US
• Binjie Fei · Fujian, CN
• Wang Guo · Beijing, CN
• Fei Tang · Beijing, CN
• Qiufeng Huang · Fujian, CN
• Xuanyi Yuan · Fujian, CN

Key dates

• Filing date: Jul 18, 2014
• Grant date: Mar 7, 2017
• Expiry date: Jul 18, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8512

Abstract

A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.