Transistor and method for manufacturing the same
US9590192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2015 |
| Grant date | Mar 7, 2017 |
| Priority date | — |
| Expiry date | Apr 3, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K2019/122
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a transistor and a method for manufacturing the same. The transistor according to an embodiment of the present invention includes a substrate, a drain electrode formed on the substrate, a source electrode formed on the substrate and spaced apart from the drain electrode, a channel layer formed on the substrate and including a channel region electrically connecting the drain electrode and the source electrode to each other, a gate electrode formed on the substrate and spaced apart from the channel region, and a liquid crystal layer formed on the substrate to connect the channel layer and the gate electrode to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.