MEMS sensor including an over-travel stop and method of manufacture
US9593008B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Sep 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02N11/002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.