Apparatus and method for carrying out a plasma deposition process
US9593037B2 · kind B2 · utility
0Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | May 19, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03B2201/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for carrying out a plasma deposition process including the steps of providing a substrate tube, supplying dopant-containing glass-forming gases to the substrate including a main gas flow and one or more secondary gas flows, inducing a plasma in the substrate tube, moving a reaction zone back and forth in strokes between a reversal point near the supply side and a reversal point near the discharge side, and interrupting the secondary gas flow during a portion of each stroke, each interruption having a start point and an end point within the same stroke.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.