Apparatus of detecting transmittance of trench on infrared-transmittable material and method thereof
US9594021B2 · kind B2 · utility
3Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.