Atomic write command support in a solid state drive
US9594520B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 21, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of performing an atomic write command in a data storage device comprising a volatile memory and a plurality of non-volatile memory devices configured to store a plurality of physical pages. The method may comprise storing data in a plurality of logical pages (L-Pages), each associated with a logical address. A logical-to-physical address translation map may be maintained in the volatile memory, and may be configured to enable determination of a physical location, within one or more of the physical pages, of the data referenced by each logical address. The data specified by a received atomic write command may be stored one or more L-Pages. Updates to the entry or entries in the translation map associated with the L-Page(s) storing the data specified by the atomic write command may be deferred until all L-Pages storing data specified by the atomic write command have been written in a power-safe manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.