Method of forming silicon on a substrate
US9595437B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Apr 28, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.